Potential based MOSFET modeling

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Mosfet Modeling

A n improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in the level 1 and level 3 subcircuit methods used extensively for modeling MOSFETs in power circuits. The new model offers excellent correlation to product data, transistor scaling not possible wit...

متن کامل

Modeling Quantum Effects on MOSFET Channel Surface Potential

Quantum mechanical (QM) effects are playing a significant role in MOSFET (metal-oxide-silicon field-effect transistor) device channel surface potential characteristics due to the ever shrinking feature size such as thin gate dielectric (below 4nm). An increase of the channel surface potential from the classical result due to the QM effects at strong inversion is reported in the simulation resul...

متن کامل

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2D and ev...

متن کامل

Symmetric and Asymmetric Double Gate MOSFET Modeling

An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...

متن کامل

Mosfet Modeling for Rf Circuit Design

In this paper, we discuss some important issues in MOSFET modeling for radio-frequency (RF) integratedcircuit (IC) design. We start with the introduction of the basics of RF modeling. A simple sub-circuit model is presented with comparisons of the data for both y parameter and fT characteristics. Good model accuracy is achieved against the measurements for a 0.25μm RF CMOS technology. The high ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: The University Thought - Publication in Natural Sciences

سال: 2018

ISSN: 1450-7226,2560-3094

DOI: 10.5937/univtho8-17067